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1. product pro?le 1.1 general description passivated, new generation, high commutation triacs in an internally insulated to-220 plastic package 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information BTA312Y series c 12 a three-quadrant triacs high commutation insulated rev. 01 27 september 2007 product data sheet n very high commutation performance n high immunity to dv/dt n isolated mounting base n 2500 v rms isolation voltage n motor control - e.g. washing machines n non-linear recti?er-fed motor loads n refrigeration compressors n lamp dimmers for us market n v drm 600 v (BTA312Y-600c) n i t(rms) 12 a n v drm 800 v (BTA312Y-800c) n i tsm 100 a (t = 20 ms) n i gt 35 ma n i tsm 110 a (t = 16.7 ms) table 1. pinning pin description simpli?ed outline symbol 1 main terminal 1 (t1) sot78d (to-220) 2 main terminal 2 (t2) 3 gate (g) mb mounting base; isolated 12 mb 3 sym051 t1 g t2 www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 2 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated 3. ordering information 4. limiting values [1] although not recommended, off-state voltages up to 800 v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. table 2. ordering information type number package name description version BTA312Y-600c to-220 plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead to-220 sot78d BTA312Y-800c table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage BTA312Y-600c; [1] - 600 v BTA312Y-800c; - 800 v i t(rms) rms on-state current full sine wave; t mb 85 c; see figure 4 and 5 -12a i tsm non-repetitive peak on-state current full sine wave; t j =25 c prior to surge; see figure 2 and 3 t = 20 ms - 100 a t = 16.7 ms - 110 a i 2 ti 2 t for fusing t = 10 ms - 50 a 2 s di t /dt rate of rise of on-state current i tm = 20 a; i g = 0.2 a; di g /dt = 0.2 a/ m s - 100 a/ m s i gm peak gate current - 2 a p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature - 40 +150 c t j junction temperature - 125 c www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 3 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated a = conduction angle fig 1. total power dissipation as a function of rms on-state current; maximum values f = 50 hz fig 2. non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aab808 0 4 8 12 16 036912 i t(rms) (a) p tot (w) a = 180 120 90 60 30 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a 003aab809 0 20 40 60 80 100 120 1 10 10 2 10 3 number of cycles (n) i tsm (a) i tsm t i t t j(init) = 25 c max 1/f www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 4 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated t p 20 ms (1) di t /dt limit fig 3. non-repetitive peak on-state current as a function of pulse duration; maximum values f = 50 hz t mb =85 c fig 4. rms on-state current as a function of surge duration; maximum values fig 5. rms on-state current as a function of mounting base temperature; maximum values 003aab806 10 10 2 10 3 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) i tsm (a) i tsm t i t t j(init) = 25 c max t p (1) 003aab807 0 10 20 30 10 -2 10 -1 1 10 surge duration (s) i t(rms) (a) 003aab805 0 5 10 15 -50 0 50 100 150 t mb ( c) i t(rms) (a) www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 5 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated 5. thermal characteristics 6. isolation characteristics table 4. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base full cycle; see figure 6 - - 2.3 k/w r th(j-a) thermal resistance from junction to ambient in free air - 60 - k/w fig 6. transient thermal impedance from junction to mounting base as a function of pulse duration 003aab804 10 - 1 10 - 2 1 10 z th(j-mb) (k/w) 10 - 3 t p (s) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 t p p t table 5. isolation limiting values and characteristics t h = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v isol(rms) rms isolation voltage from all three terminals to external heatsink; f = 50 hz to 60 hz; sinusoidal waveform; rh 65 %; clean and dust free - - 2500 v c isol isolation capacitance from pin 2 to external heatsink; f=1mhz -10-pf www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 6 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated 7. static characteristics table 6. static characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i gt gate trigger current v d =12v; i t = 0.1 a; see figure 8 t2+ g+ 2 - 35 ma t2+ g - 2 - 35 ma t2 - g - 2 - 35 ma i l latching current v d =12v; i gt = 0.1 a; see figure 10 t2+ g+ - - 50 ma t2+ g - - - 60 ma t2 - g - - - 50 ma i h holding current v d =12v; i gt = 0.1 a; see figure 11 - - 35 ma v t on-state voltage i t = 15 a; see figure 9 - 1.3 1.6 v v gt gate trigger voltage v d =12v; i t = 0.1 a; see figure 7 - 0.8 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 c 0.25 0.4 - v i d off-state current v d =v drm(max) ; t j = 125 c - 0.1 0.5 ma www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 7 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated 8. dynamic characteristics table 7. dynamic characteristics symbol parameter conditions min typ max unit dv d /dt rate of rise of off-state voltage v dm = 0.67 v drm(max) ; t j = 125 c; exponential waveform; gate open circuit 500 - - v/ m s di com /dt rate of change of commutating current v dm = 400 v; t j = 125 c; i t(rms) = 12 a; without snubber; gate open circuit 20 - - a/ms t gt gate-controlled turn-on time i tm = 20 a; v d =v drm(max) ; i g = 0.1 a; di g /dt = 5 a/ m s-2- m s (1) t2 - g - (2) t2+ g - (3) t2+ g+ fig 7. normalized gate trigger voltage as a function of junction temperature fig 8. normalized gate trigger current as a function of junction temperature t j ( c) - 50 150 100 050 001aab101 0.8 1.2 1.6 0.4 v gt v gt(25 c) t j ( c) - 50 150 100 050 001aac669 1 2 3 0 (1) (2) (3) i gt i gt(25 c) www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 8 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated v o = 1.127 v r s = 0.027 w (1) t j = 125 c; typical values (2) t j = 125 c; maximum values (3) t j = 25 c; maximum values fig 9. on-state current as a function of on-state voltage fig 10. normalized latching current as a function of junction temperature fig 11. normalized holding current as a function of junction temperature 003aab678 0 10 20 30 40 00.511.522.5 v t (v) i t (a) (1) (2) (3) t j ( c) - 50 150 100 050 001aab100 1 2 3 0 i l i l(25 c) t j ( c) - 50 150 100 050 001aab099 1 2 3 0 i h i h(25 c) www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 9 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated 9. package outline fig 12. package outline sot78d (3-lead to-220) references outline version european projection issue date iec jedec jeita sot78d to-220 sot78d 07-04-04 07-07-10 unit a mm 4.7 4.3 1.40 1.25 0.9 0.6 0.6 0.4 16.0 15.2 6.5 10.3 9.7 3.0 0.2 a 1 dimensions (mm are the original dimensions) plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead to-220 0 5 10 mm scale b c d d 1 ref e e 2.54 l 14.0 12.8 l 1 ref p 3.7 3.5 q 2.6 2.2 q 3.0 2.7 w b 2 1.72 1.32 b 1 1.4 1.1 c q a 1 a mounting base e e w m p b b 2 b 1 d 1 l d l 1 q e 123 www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 10 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated 10. revision history table 8. revision history document id release date data sheet status change notice supersedes BTA312Y_ser_c_1 20070927 product data sheet - - www.datasheet.in
BTA312Y_ser_c_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 27 september 2007 11 of 12 nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 11.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 12. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. www.datasheet.in
nxp semiconductors BTA312Y series c 12 a three-quadrant triacs high commutation insulated ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 27 september 2007 document identifier: BTA312Y_ser_c_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 13. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 6 isolation characteristics . . . . . . . . . . . . . . . . . . 5 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 6 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 11.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 contact information. . . . . . . . . . . . . . . . . . . . . 11 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 www.datasheet.in

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